4 years ago

Boosting the Charge Transport Property of Indeno[1,2-b]fluorene-6,12-dione though Incorporation of Sulfur- or Nitrogen-Linked Side Chains

Boosting the Charge Transport Property of Indeno[1,2-b]fluorene-6,12-dione though Incorporation of Sulfur- or Nitrogen-Linked Side Chains
Hao-Li Zhang, Xiangfeng Shao, Zi-Fa Shi, Bing Sun, Xian Fei, Xiang-Yang Li, Xiao-E. Luo, Zhi-Ping Fan, Li-Chuan Chen, Chun-Lin Sun
Alkyl chains are basic units in the design of organic semiconductors for purposes of enhancing solubility, tuning electronic energy levels, and tailoring molecular packing. This work demonstrates that the carrier mobilities of indeno[1,2-b]fluorene-6,12-dione (IFD)-based semiconductors can be dramatically enhanced by the incorporation of sulfur- or nitrogen-linked side chains. Three IFD derivatives possessing butyl, butylthio, and dibutylamino substituents are synthesized, and their organic field-effect transistors (OFET) are fabricated and characterized. The IFD possessing butyl substituents exhibits a very poor charge transport property with mobility lower than 10−7 cm2 V−1 s−1. In contrast, the hole mobility is dramatically increased to 1.03 cm2 V−1 s−1 by replacing the butyl units with dibutylamino groups (DBA-IFD), while the butylthio-modified IFD (BT-IFD) derivative exhibits a high and balanced ambipolar charge transport property with the maximum hole and electron mobilities up to 0.71 and 0.65 cm2 V−1 s−1, respectively. Moreover, the complementary metal–oxide–semiconductor-like inverters incorporated with the ambipolar OFETs shows sharp inversions with a maximum gain value up to 173. This work reveals that modification of the aromatic core with heteroatom-linked side chains, such as alkylthio or dialkylamino, can be an efficient strategy for the design of high-performance organic semiconductors. Dramatic improvement of hole and electron transport properties of indeno[1,2-b]fluorene-6,12-dione is achieved through incorporation of sulfur- or nitrogen-linked side chains. Materials containing sulfur linkage give ambipolar organic field-effect transistors (OFETs) with high and balanced hole and electron mobilities. Complementary metal–oxide–semiconductor-like inverters based on the ambipolar OFETs exhibit high gain value up to 173.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/adfm.201702318

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