Nanotechnology
Nanotechnology
5 years ago

Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN.

Wang, Kumar, Guo, Pandey
Van der Waals structures based on two dimensional materials have been considered as promising materials for novel nanoscale electronic devices. Two dimensional SnO films which display intrinsic p-type semiconducting properties were fabricated recently. In this paper, we consider the vertically stacked heterostructures consisting of SnO monolayer with graphene or BN monolayer to investigate their stability, electronic and transport properties using density functional theory. The calculated results find that properties of the constituent monolayers are retained in these SnO-based heterostructures, and a p-type Schottky barrier is formed in the SnO/graphene heterostructure. Additionally, the Schottky barrier can be effectively controlled with an external electric field, which is useful characteristics for the van der Waals heterostructure-based electronic devices. In the SnO/BN heterostructure, the electronic properties of SnO are least affected by the insulating monolayer suggesting the BN monolayer to be an ideal substrate for the SnO-based nanoscale devices.

Publisher URL: http://doi.org/10.1088/1361-6528/aa92ab

DOI: 10.1088/1361-6528/aa92ab

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