Chemical Patterning of High-Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

5 years ago

Chemical Patterning of High-Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

Jinxiong Wu, Jianbo Yin, Tianran Li, Zhenjun Tan, Congwei Tan, Teng Tu, Hailin Peng, Yujing Liu

Patterning of high-mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next-generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high-mobility semiconducting Bi2O2Se crystals using dilute H2O2 and protonic mixture acid as efficient etchants. The 2D Bi2O2Se crystal after chemical etching maintains a high Hall mobility of over 200 cm2 V−1 s−1 at room temperature. Centimeter-scale well-ordered arrays of 2D Bi2O2Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi2O2Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W−1 at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits. Controlled patterning of high-mobility semiconducting two-dimensional Bi2O2Se crystals was achieved by a facile wet-chemical etching approach using diluted H2O2/protonic acid etchants. Centimeter-scale well-ordered two-dimensional Bi2O2Se arrays exhibit a high Hall mobility of over 200 cm2 V−1 s−1 at room temperature, and are integrated into air-stable photodetectors with an ultrahigh photoresponsivity of ≈2000 A W−1 at 532 nm.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/adma.201704060