3 years ago

Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition.

Durrani, Scotuzzi, Jones, Wang, Hagen
Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition (EBID). These consist of nanodots and nanowires with a minimum size ~20 nm, integrated within ~100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ~20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 - 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.

Publisher URL: http://doi.org/10.1088/1361-6528/aa9356

DOI: 10.1088/1361-6528/aa9356

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