3 years ago

Homoepitaxial Diamond Structures with Incorporated SiV Centers

Fedor Jelezko, Cyril Popov, Boris Naydenov, Nina Felgen, Johann P. Reithmaier


The incorporation of SiV centers during diamond overgrowth on top of partly covered monocrystalline diamond pillars with diameters down to 200 nm are reported. The pillars themselves are prepared via electron beam lithography and inductively coupled plasma reactive ion etching. Then they are covered with a spin‐on‐glass (SOG) (perhydropolysilazane, PHPS) still jutting the apices of the pillars. After a short overgrowth step and removal of the residual SOG the optical investigations reveal the presence of ensembles of SiV centers in the overgrown part of the pillars, a specific location of the centers, and a very strong PL signal.

Publisher URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201800371

DOI: 10.1002/pssa.201800371

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