3 years ago

Highly Ordered, Ultralong Mn-Based Nanowire Films with Low Contact Resistance as Freestanding Electrodes for Flexible Supercapacitors with Enhanced Performance

Highly Ordered, Ultralong Mn-Based Nanowire Films with Low Contact Resistance as Freestanding Electrodes for Flexible Supercapacitors with Enhanced Performance
Yin Yang, Lin Yu, Ming Sun, Yulin Deng, Junli Zhou, Zhifeng Hao
Nanowires (NWs) have attracted considerable scientific interest in fabricating high-performance electronic and optical devices. In particular, highly ordered NWs could exhibit unique properties such as good intrinsic electrical conductivity and fast electron transportation. In this work, freestanding films from ultralong manganese dioxide/polyaniline (MNW/PANI) coaxial NWs (ca. 200 μm) with a highly ordered structure have been fabricated at the oil/water interface and then used as flexible electrodes. The ultralong MNW/PANI coaxial NWs with highly ordered orientation provide a longer and continuous electron transportation pathway in the electrode compared to disordered NWs, which could greatly reduce the inter-junction resistance between NWs in a film to achieve a high capacitance. The electrodes based on ordered NWs show a much lower contact resistance (10.8 Ω cm−2) compared with the randomly oriented ones (96.5 Ω cm−2). The thin film supercapacitor (TFSC) based on well-ordered MNW/PANI NWs possesses mechanical flexibility, a high specific capacitance of 64.54 mF cm−2 (corresponding to 121.77 F g−1 at a mass loading density of 0.53 mg cm−2), a high energy/powder density (44.80 mWh cm−3, 580 mW cm−3), as well as good cycle stability with high capacitance retention (98 %) after 2000 cycles. Call to order: Highly ordered thin-film electrode materials based on ultralong MNW/PANI coaxial nanowires (NWs) (ca. 200 μm in length) are designed through a water/oil two-phase interface. The ultralong MNW/PANI NWs with highly ordered orientation could provide longer and continuous charge transportation pathways for the electrons compared to disordered NWs, and greatly reduce the inter-junction resistance between NWs in a film to achieve high capacitance.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/celc.201700819

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