4 years ago

Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias.

Silva, Josell, Moffat
This work demonstrates void-free cobalt filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and processes are described. This work extends understanding and application of the additive-derived S-shaped Negative Differential Resistance (S-NDR) mechanism, including previous demonstrations of superconformal filling of TSVs with nickel, copper, zinc and gold.

Publisher URL: http://doi.org/10.1149/07502.0025ecst

DOI: 10.1149/07502.0025ecst

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