4 years ago

Geometry-Dependent Auger Recombination Process in Semiconductor Nanostructures

Geometry-Dependent Auger Recombination Process in Semiconductor Nanostructures
Yan He, Gang Ouyang
The geometry-dependent Auger recombination (AR) rate of semiconductor nanostructures has been investigated based on atomic-bond-relaxation correlation mechanism. We found that the increase in dimension is of great benefit to suppress the AR process due to reduction of the Coulomb interaction between electron and hole. The AR lifetime increases as the size decreases with a Eg7/2D7 dependence. Moreover, the AR rate of nanostructures can be achieved though modulating the related geometry parameters. Our results are consistent with the available evidence, implying that the proposed model could be expected to be a general approach to deal with AR process in semiconductor nanostructures.

Publisher URL: http://dx.doi.org/10.1021/acs.jpcc.7b08553

DOI: 10.1021/acs.jpcc.7b08553

You might also like
Discover & Discuss Important Research

Keeping up-to-date with research can feel impossible, with papers being published faster than you'll ever be able to read them. That's where Researcher comes in: we're simplifying discovery and making important discussions happen. With over 19,000 sources, including peer-reviewed journals, preprints, blogs, universities, podcasts and Live events across 10 research areas, you'll never miss what's important to you. It's like social media, but better. Oh, and we should mention - it's free.

  • Download from Google Play
  • Download from App Store
  • Download from AppInChina

Researcher displays publicly available abstracts and doesn’t host any full article content. If the content is open access, we will direct clicks from the abstracts to the publisher website and display the PDF copy on our platform. Clicks to view the full text will be directed to the publisher website, where only users with subscriptions or access through their institution are able to view the full article.