3 years ago

Semiconductors: Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures (Small 40/2017)

Semiconductors: Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures (Small 40/2017)
Yue Qi, Mengxi Liu, Yuanchang Li, Zhongfan Liu, Yanfeng Zhang, Donglin Ma, Xiebo Zhou, Jianping Shi
In article number 1602967, Yanfeng Zhang, and Zhongfan Liu, and co-workers demonstrate that sulfur vacancies generated in MoS2/graphene heterostructures via a temperature-triggered process, lead to a decrease of the bandgap and n-doping effect of single layer MoS2.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/smll.201770216

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