3 years ago

Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses

Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses
Dawei Di, Haiping He, Kai Du, Mengmeng Xu, Yang Liu, Dong Chen, Junjie Si, Yizheng Jin, Yingchun Cheng, Changqing Lin, Jing Li, Jianpu Wang, He Tian, Hui Du, Zhuofei He
We report a facile solution-based approach to the in situ growth of perovskite films consisting of monolayers of CsPbBr3 nanoplates passivated by bulky phenylbutylammonium (PBA) cations, that is, two-dimensional layered PBA2(CsPbBr3)n−1PbBr4 perovskites. Optimizing film formation processes leads to layered perovskites with controlled n values in the range of 12–16. The layered perovskite emitters show quantum-confined band gap energies with a narrow distribution, suggesting the formation of thickness-controlled quantum-well (TCQW) structures. The TCQW CsPbBr3 films exhibit smooth surface features, narrow emission line widths, low trap densities, and high room-temperature photoluminance quantum yields, resulting in high-color-purity green light-emitting diodes (LEDs) with remarkably high external quantum efficiencies (EQEs) of up to 10.4%. The solution-based approach is extended to the preparation of TCQW CsPbI3 films for high-color-purity red perovskite LEDs with high EQEs of up to 7.3%.

Publisher URL: http://dx.doi.org/10.1021/acsnano.7b05191

DOI: 10.1021/acsnano.7b05191

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