3 years ago

Graphene-Silicon Schottky diodes for photodetection.

Giuseppe Luongo, Laura Iemmo, Antonio Di Bartolomeo, Filippo Giubileo

We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.

Publisher URL: http://arxiv.org/abs/1710.10142

DOI: arXiv:1710.10142v1

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