3 years ago

Locally hydrazine doped WSe2 p-n junction toward high-performance photodetectors.

Weiwei Li, Dan Xie, Mengxing Sun, Tianling Ren, Yilin Sun
Two dimensional (2D) materials have shown great potentials in the photodetection and other optoelectronic applications. Exploiting 2D materials to form p-n junctions enables effective generation and separation of carriers excited by light, thus creating high-performance optoelectronic devices. This paper demonstrates a lateral WSe2 p-n junction through locally hydrazine doping method. Good current-rectifying characteristics including a high rectification ratio of ∼103 have been observed, which indicates that a high-quality p-n junction has been formed by chemical doping. Under light illumination, the device shows improved photoresponse capabilities with a responsivity of 30 mA/W, a detectivity of 6.18 × 108 Jones, photocurrent/dark current ratio of 103 and a response time of 2 ms. These results suggest an effective way to get a p-n junction and reveal the potential of the device on the application for next generation photodetectors.

Publisher URL: http://doi.org/10.1088/1361-6528/aa96e9

DOI: 10.1088/1361-6528/aa96e9

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