3 years ago

Proximity-induced superconductivity within the InAs/GaSb edge conducting state.

E.A. Emelyanov, V.A. Kostarev, V.V. Preobrazhenskii, E.V. Deviatov, B.R. Semyagin, M.A. Putyato, A. Kononov

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10 nm samples, differential resistance is monotonous within the indium superconducting gap. For InAs/GaSb structures with band inversion (12 nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~ m InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.

Publisher URL: http://arxiv.org/abs/1710.11375

DOI: arXiv:1710.11375v1

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