Proximity-induced superconductivity within the InAs/GaSb edge conducting state.
We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10 nm samples, differential resistance is monotonous within the indium superconducting gap. For InAs/GaSb structures with band inversion (12 nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~ m InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.
Publisher URL: http://arxiv.org/abs/1710.11375
Keeping up-to-date with research can feel impossible, with papers being published faster than you'll ever be able to read them. That's where Researcher comes in: we're simplifying discovery and making important discussions happen. With over 19,000 sources, including peer-reviewed journals, preprints, blogs, universities, podcasts and Live events across 10 research areas, you'll never miss what's important to you. It's like social media, but better. Oh, and we should mention - it's free.
Researcher displays publicly available abstracts and doesn’t host any full article content. If the content is open access, we will direct clicks from the abstracts to the publisher website and display the PDF copy on our platform. Clicks to view the full text will be directed to the publisher website, where only users with subscriptions or access through their institution are able to view the full article.