3 years ago

Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy

Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy
Nicolas Bologna, Mattias Borg, Heinz Schmid, Heike Riel, Marta D. Rossell, Stephan Wirths, Kirsten E. Moselund, Moritz Knoedler
We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal−organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

Publisher URL: http://dx.doi.org/10.1021/acs.cgd.7b00983

DOI: 10.1021/acs.cgd.7b00983

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