3 years ago

The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer

The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer
Pengchong Li, Degang Zhao, Long Yan, Guotong Du, Yuantao Zhang, Liang Chen, Ye Yu, Xu Han, Gaoqiang Deng, Zhen Huang
A model was proposed to explain the epitaxial growth mechanism of N-polar GaN films with an in situ deposited porous SiNx interlayer.

Publisher URL: http://feeds.rsc.org/~r/rss/CE/~3/majhd12BuNA/C7CE00840F

DOI: 2017/CE/C7CE00840F

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