5 years ago

Spatial variation of lattice plane bending of 4H-SiC substrates

Spatial variation of lattice plane bending of 4H-SiC substrates
Xiangang Xu, Rongkun Wang, Xiaobo Hu, Xuejian Xie, Yingxin Cui
Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).

Publisher URL: http://feeds.rsc.org/~r/rss/CE/~3/X0DsPLNO7hQ/C7CE00572E

DOI: 2017/CE/C7CE00572E

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