3 years ago

Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices

Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices
Michael Snure, Kelson D. Chabak, Donald L. Dorsey, Nicholas R. Glavin, Benji Maruyama, Dennis E. Walker, Elizabeth A. Moore, Timothy A. Prusnick, Qing Paduano, Eric R. Heller
Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm2 V−1 s−1 and sheet carrier density above 1.07 × 1013 cm−2. The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications. Flexible gallium nitride (GaN) thin films and devices are described that enable amplification of radio-frequency signals in future conformal and wearable electronics. Flexible GaN is realized through lift-off using a 2D boron nitride release layer and can accommodate strains up to 0.43%, while exhibiting electron mobility and small signal frequency performance rivaling high-performing, rigid GaN materials.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/adma.201701838

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