3 years ago

Effects of Bithiophene Imide Fusion on the Device Performance of Organic Thin-Film Transistors and All-Polymer Solar Cells

Effects of Bithiophene Imide Fusion on the Device Performance of Organic Thin-Film Transistors and All-Polymer Solar Cells
Junfeng Dai, Yingfeng Wang, Han Guo, Huimin Su, Xin Zhou, Zhenglong Yan, Xugang Guo, Han Young Woo, Shaohua Ling, Mohammad Afsar Uddin
Two new bithiophene imide (BTI)-based n-type polymers were synthesized. f-BTI2-FT based on a fused BTI dimer showed a smaller band gap, a lower LUMO, and higher crystallinity than s-BTI2-FT containing a BTI dimer connected through a single bond. s-BTI2-FT exhibited a remarkable electron mobility of 0.82 cm2 V−1 s−1, and f-BTI2-FT showed a further improved mobility of 1.13 cm2 V−1 s−1 in transistors. When blended with the polymer donor PTB7-Th, f-BTI2-FT-based all-polymer solar cells (all-PSCs) attained a PCE of 6.85 %, the highest value for an all-PSC not based on naphthalene (or perylene) diimide polymer acceptors. However, s-BTI2-FT all-PSCs showed nearly no photovoltaic effect. The results demonstrate that f-BTI2-FT is one of most promising n-type polymers and that ring fusion offers an effective approach for designing polymers with improved electrical properties. Best used fused: Two bithiophene imide (BTI)-based n-type polymer semiconductors were synthesized and characterized (see structures). Both showed substantial electron mobilities in organic thin-film transistors; however, ring fusion of the BTI dimer drastically increased the device performance of the resulting polymer in all-polymer solar cells, with remarkable power-conversion efficiency up to 6.85 % and a large open-circuit voltage of 1.04 V.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/anie.201708421

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