3 years ago

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy.

Ariel H. Seidner, Darrell G. Schlom, Zhen Chen, Zi-Kui Liu, Debdeep Jena, Amit Verma, Masaki Uchida, Jisung Park, Kyle M. Shen, David A. Muller, Reinhard Uecker, Nicholas Tanen, Mario Brützam, Bi-Cheng Zhou, Edward Lochocki, ShunLi Shang, Hanjong Paik

Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects possibly (BaO)2 crystallographic shear defects or point defects significantly reduce the electron mobility.

Publisher URL: http://arxiv.org/abs/1711.00496

DOI: arXiv:1711.00496v1

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