3 years ago

Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon, Sangsig Kim, Doohyeok Lim, Kyeungmin Im, Yoonjoong Kim


In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.

Publisher URL: https://link.springer.com/article/10.1007/s12274-017-1884-9

DOI: 10.1007/s12274-017-1884-9

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