3 years ago

Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon, Sangsig Kim, Doohyeok Lim, Kyeungmin Im, Yoonjoong Kim

Abstract

In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.

Publisher URL: https://link.springer.com/article/10.1007/s12274-017-1884-9

DOI: 10.1007/s12274-017-1884-9

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