3 years ago

Plasmon resonant amplification of a hot electron-driven photodiode

Haotian Shi, Arturo Pilar, Bingya Hou, Stephen B. Cronin, William D. Page, George N. Gibson, Lang Shen, Jihan Chen, Nirakar Poudel, Ernest Guignon


We report plasmon resonant excitation of hot electrons in a photodetector based on a metal/oxide/metal (Au/Al2O3/graphene) heterostructure. In this device, hot electrons, excited optically in the gold layer, jump over the oxide barrier and are injected into the graphene layer, producing a photocurrent. To amplify this process, the bottom gold electrode is patterned into a plasmon resonant grating structure with a pitch of 500 nm. The photocurrent produced in this device is measured using 633-nm-wavelength light as a function of incident angle. We observe the maximum photocurrent at ±10° from normal incidence under irra-diation with light polarized parallel to the incident plane (p-polarization) and perpendicular to the lines on the grating, and a constant (angle-independent) photocurrent under irradiation with light polarized perpendicular to the incident plane (s-polarization) and parallel to the grating. These data show an amplification factor of 4.6× under resonant conditions. At the same angle (±10°), we also observe sharp dips in the photoreflectance corresponding to waveve-ctor matching between the incident light and the plasmon mode in the grating. In addition, finite-difference time-domain simulations predict sharp dips in the photoreflectance at ±10°, and the electric field intensity profiles show clear excitation of a plasmon resonant mode when illuminated with p-polarized light at this angle.

Publisher URL: https://link.springer.com/article/10.1007/s12274-017-1854-2

DOI: 10.1007/s12274-017-1854-2

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