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Graphene: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices (Small 28/2017)

Graphene: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices (Small 28/2017)
Zhongying Xue, Peng Zhou, Xiaoming Xie, Zengfeng Di, Ziwen Wang, Yongqiang Wang, Xi Wang, Paul K. Chu, Miao Zhang
In article number 1700929, by Peng Zhou, Zengfeng Di, and co-workers, graphene with the desired pattern is produced on arbitrary dielectric substrates by a semiconducting, germanium-assisted, chemical vapor deposition approach, in which the complete sublimation of the catalytic Ge layer occurs during or immediately after the formation of the monolayer graphene.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/smll.201770150

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