3 years ago

Fabrication of n-buffer layers in organic devices by friction-transfer method

Nobutaka Tanigaki, Toshiko Mizokuro

The buffer layers, which are inserted between electrodes and active layers, are important for improving organic devices, e.g., photovoltaic (OPVs) or light emitting devices (OLEDs). An amine-substituted polyfluorene, PFN-P1, is used as an n-type buffer material, transporting electron, which is inserted between cathodes and active layers. In this study, we tried to fabricate n-buffer layers of PFN-P1 by friction transfer that is film coating method using no solvent. PFN-P1 thin layers on ITO substrates could be prepared by friction transfer method. We fabricated inverted OPVs with friction-transferred n-type buffer layers. The device structure is Ag/PEDOT:PSS/ PTB7:PCBM/PFN-P1/ITO. This device showed a comparable performance with a device with spin-coated PFN-P1. We also fabricated MEH-PPV-based inverted OLED using a friction-transferred PFN-P1.

Publisher URL: http://www.tandfonline.com/doi/full/10.1080/15421406.2017.1351270

DOI: 10.1080/15421406.2017.1351270

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