Journal of the American Chemical Society
Journal of the American Chemical Society
5 years ago

The Two-Dimensional AxCdxBi4–xQ6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials

The Two-Dimensional AxCdxBi4–xQ6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials
Haijie Chen, Gangjian Tan, Jing Zhao, Saiful M. Islam, Oleg Y. Kontsevoi, R. K. Li, Mercouri G. Kanatzidis, Constantinos C. Stoumpos
We report the new layered chalcogenides AxCdxBi4–xQ6 (A = Cs, Rb, K; Q = S and A = Cs; Q = Se). All compounds are isostructural crystallizing in the orthorhombic space group Cmcm, with a = 4.0216(8) Å, b = 6.9537(14) Å, c = 24.203(5) Å for Cs1.43Cd1.43Bi2.57S6 (x = 1.43); a = 3.9968(8) Å, b = 6.9243(14) Å, c = 23.700(5) Å for Rb1.54Cd1.54Bi2.46S6 (x = 1.54); a = 3.9986(8) Å, b = 6.9200(14) Å, c = 23.184(5) Å for K1.83Cd1.83Bi2.17S6 (x = 1.83) and a = 4.1363(8) Å, b = 7.1476(14) Å, c = 25.047(5) Å for Cs1.13Cd1.13Bi2.87Se6 (x = 1.13). These structures are intercalated derivatives of the Bi2Se3 structure by way of replacing some Bi3+ atoms with divalent Cd2+ atoms forming negatively charged Bi2Se3-type quintuple [CdxBi2–xSe3]x− layers. The bandgaps of these compounds are between 1.00 eV for Q = Se and 1.37 eV for Q = S. Electronic band structure calculations at the density functional theory (DFT) level indicate Cs1.13Cd1.13Bi2.87Se6 and Cs1.43Cd1.43Bi2.57S6 to be direct band gap semiconductors. Polycrystalline Cs1.43Cd1.43Bi2.57S6 samples show n-type conduction and an extremely low thermal conductivity of 0.33 W·m–1·K–1 at 773 K. The cesium ions between the layers of Cs1.43Cd1.43Bi2.57S6 are mobile and can be topotactically exchanged with Pb2+, Zn2+, Co2+ and Cd2+ in aqueous solution. The intercalation of metal cations presents a direct “soft chemical” route to create new materials.

Publisher URL: http://dx.doi.org/10.1021/jacs.7b02243

DOI: 10.1021/jacs.7b02243

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