Valley blockade in a silicon double quantum dot.
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocking of tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data.
Publisher URL: http://arxiv.org/abs/1607.06107
DOI: arXiv:1607.06107v2
Keeping up-to-date with research can feel impossible, with papers being published faster than you'll ever be able to read them. That's where Researcher comes in: we're simplifying discovery and making important discussions happen. With over 19,000 sources, including peer-reviewed journals, preprints, blogs, universities, podcasts and Live events across 10 research areas, you'll never miss what's important to you. It's like social media, but better. Oh, and we should mention - it's free.
Researcher displays publicly available abstracts and doesn’t host any full article content. If the content is open access, we will direct clicks from the abstracts to the publisher website and display the PDF copy on our platform. Clicks to view the full text will be directed to the publisher website, where only users with subscriptions or access through their institution are able to view the full article.