5 years ago

Room-Temperature Group-IV LED Based on Defect-Enhanced Ge Quantum Dots

Room-Temperature Group-IV LED Based on Defect-Enhanced Ge Quantum Dots
Patrick Rauter, Thomas Fromherz, Julia Freund, Lukas Spindlberger, Moritz Brehm, Friedrich Schäffler
As recently demonstrated, defect-enhanced Ge quantum dots (Ge-DEQDs) in a crystalline Si matrix can be employed as CMOS-compatible gain material in optically pumped lasers. Due to the stability of their optical properties up to temperatures beyond 300 K, the Ge-DEQD system is a highly promising candidate for the realization of an electrically pumped group-IV laser source for integration in a monolithic optoelectronic platform fit for room-temperature operation. We report on the realization of light-emitting diodes based on Ge-DEQDs operating at telecom wavelengths and above room temperature. The DEQD electroluminescence characteristics were studied spectrally resolved as a function of driving current and device temperature. The experimental results show that the excellent optical properties of Ge-DEQDs are maintained under electrical pumping at high current densities and at device temperatures of at least 100 °C. Furthermore, the emission intensity scales with the number of quantum dot layers embedded into the p-i-n diode structures, thus, indicating the scalability of the approach for large gain material volumes. The presented results form an essential step toward the future demonstration of a CMOS-compatible, electrically pumped room-temperature laser based on Ge-DEQDs.

Publisher URL: http://dx.doi.org/10.1021/acsphotonics.7b00888

DOI: 10.1021/acsphotonics.7b00888

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