3 years ago

Gate-tuned charge-doping and magnetism in graphene/a-RuCl3 heterostructures.

Boyi Zhou, J. Balgley, P. Lampen-kelley, J.-q. Yan, D. G. Mandrus, E. A. Henriksen

The layered Mott insulator a-RuCl3 exhibits phenomena consistent with quantum spin liquid behavior. Particularly intriguing among recent discoveries is a half-integer quantized thermal Hall conductance, signaling the presence of non-Abelian excitations which may be useful in creating a topological quantum bit. To this end, an electronic means of probing a-RuCl3 is greatly desirable, but the pristine bulk samples are strongly insulating. To attack this problem we explore the low-field electronic properties of van der Waals heterostructures composed of exfoliated a-RuCl3 flakes stacked on monolayer graphene, toward using graphene as a proximity sensor of magnetic states in a-RuCl3. Unexpectedly, we find the devices exhibit an anomalously large conductivity along with signatures of multi-band transport, strongly implying the a-RuCl3 has become charge-doped and conducting simply by proximity to graphene. Additionally, the temperature derivative of the resistivity contains clear signatures of magnetic phase transitions. All of these properties depend on an applied gate voltage. Proximity to graphene is thus a new tool for controlling the electronic and magnetic properties in stacks of atomically-thin materials.

Publisher URL: http://arxiv.org/abs/1811.04838

DOI: arXiv:1811.04838v1

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