3 years ago

Substrate Effects on Charge Carrier Transport Properties of Single‐Crystal CVD Diamonds and an 8 mm Square Radiation Energy Spectrometer

Shintaro Hirano, Junichi H. Kaneko, Takanori Hanada, Shogo Ito, Takehiro Shimaoka, Hiroaki Shimmyo, Masakatsu Tsubota, Akiyoshi Chayahara, Yoshiaki Mokuno, Hitoshi Umezawa

Abstract

In an effort to enlarge a sensitive area of a diamond radiation energy spectrometer, a self‐standing chemical vapor deposition (CVD) single crystal is grown on an 8‐mm‐square “general grade” CVD single‐crystal diamond substrate fabricated by Element Six Ltd. The growth conditions that achieved a μτ product of 3 × 10−4 cm2 V−1 for holes in a CVD single‐crystal diamond grown on a high‐pressure and high‐temperature (HP/HT) type IIa single‐crystal diamond substrate elsewhere are adopted. The charge collection efficiency (CCE) of 99.9% for both charge carriers, and 0.39% and 0.5% of energy resolution for holes and electrons are achieved using 5.486 MeV alpha particles. Uniformity of the energy resolution is sufficient for the use of a radiation energy spectrometer. However, μτ products of (5.0 ± 0.4) × 10−5 and (1.8 ± 0.2) × 10−5 cm2 V−1 for holes and electrons are obtained, respectively. These values are approximately one order of magnitude smaller than the μτ products of the CVD single crystal grown on a HP/HT type IIa diamond substrate using the same growth conditions.

Publisher URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201800333

DOI: 10.1002/pssa.201800333

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