5 years ago

Revealing impact of plasma condition on graphite nanostructures and effective charge doping of graphene

Revealing impact of plasma condition on graphite nanostructures and effective charge doping of graphene
It is difficult to achieve effective doping without inducing structural damage in plasma-assisted processes. In this study, we demonstrate the effects of the plasma condition on the doping and defect formation in graphene. Direct-current ammonia plasma with parallel electrodes is used. We change the electrode configuration and adjust the plasma input power and treatment time to utilize various ion-bombardment energies and plasma doses. The up-cathode system with a powered upper electrode and ground lower anode is more suitable than the traditional down-cathode system for plasma doping. This configuration yields a low-energy ion process and thus suppresses high-energy ion-induced damages. The plasma condition of 0.45 W of power and exposure for 10 s is the most appropriate for doping. The doping level is estimated as 1.80 × 10 12 and 2.07 × 10 12 c m 2 according to Raman analysis and electrical characterization, respectively. The structural evolution of graphene and the doping components are investigated via Raman spectroscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. The results provide an effective doping condition for doping nanomaterials without plasma-induced damage.

Publisher URL: www.sciencedirect.com/science

DOI: S0008622317307418

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