5 years ago

Argon Plasma Induced Phase Transition in Monolayer MoS2

Argon Plasma Induced Phase Transition in Monolayer MoS2
Mengzhou Liao, Na Li, Hua Yu, Jianqi Zhu, Luojun Du, JianLing Meng, Ying Jiang, Xiaobo Lu, Guangyu Zhang, Zhichang Wang, Rong Yang, Dongxia Shi, Jing Zhao, Jing Zhang
In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H→1T phase transition in monolayer MoS2 to form mosaic structures. These 2H→1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements. On the basis of a selected-area phase patterning process, we fabricated MoS2 FETs inducing 1T phase transition within the metal contact areas, which exhibit substantially improved device performances. Our results open up a new route for phase engineering in monolayer MoS2 and other transition metal dichalcogenide (TMD) materials.

Publisher URL: http://dx.doi.org/10.1021/jacs.7b05765

DOI: 10.1021/jacs.7b05765

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