5 years ago

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition
Ryan Beams, William A. Kimes, Berc Kalanyan, Ravindra K. Kanjolia, Stephan J. Stranick, Albert V. Davydov, James E. Maslar, Irina Kalish, Elias Garratt
High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor-phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metal–organic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)bis(dimethylamido)molybdenum and diethyl disulfide, we deposit MoS2 films from ∼1 nm to ∼25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO2/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metal–organic reagents in the controlled synthesis of TMDs.

Publisher URL: http://dx.doi.org/10.1021/acs.chemmater.7b01367

DOI: 10.1021/acs.chemmater.7b01367

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