5 years ago

Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)

Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)
Marc G. Cuxart, Sergio O. Valenzuela, Stephan Roche, Kenan Song, Roberto Robles, Aitor Mugarza, Pablo Ordejón, Frédéric Bonell
Twin boundaries are extended defects commonly found in topological insulators. Optimized epitaxial growth on BaF2(111) results in the full suppression of twinning. The combined influence of the growth temperature, epilayer composition, and substrate roughness on twin reduction and crystal quality is demonstrated. Twin-free Bi2Te3 films show an intrinsic low doping level, with the Fermi level in the bulk band gap.

Publisher URL: http://dx.doi.org/10.1021/acs.cgd.7b00525

DOI: 10.1021/acs.cgd.7b00525

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