3 years ago

Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)

Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)
Marc G. Cuxart, Sergio O. Valenzuela, Stephan Roche, Kenan Song, Roberto Robles, Aitor Mugarza, Pablo Ordejón, Frédéric Bonell
Twin boundaries are extended defects commonly found in topological insulators. Optimized epitaxial growth on BaF2(111) results in the full suppression of twinning. The combined influence of the growth temperature, epilayer composition, and substrate roughness on twin reduction and crystal quality is demonstrated. Twin-free Bi2Te3 films show an intrinsic low doping level, with the Fermi level in the bulk band gap.

Publisher URL: http://dx.doi.org/10.1021/acs.cgd.7b00525

DOI: 10.1021/acs.cgd.7b00525

You might also like
Discover & Discuss Important Research

Keeping up-to-date with research can feel impossible, with papers being published faster than you'll ever be able to read them. That's where Researcher comes in: we're simplifying discovery and making important discussions happen. With over 19,000 sources, including peer-reviewed journals, preprints, blogs, universities, podcasts and Live events across 10 research areas, you'll never miss what's important to you. It's like social media, but better. Oh, and we should mention - it's free.

  • Download from Google Play
  • Download from App Store
  • Download from AppInChina

Researcher displays publicly available abstracts and doesn’t host any full article content. If the content is open access, we will direct clicks from the abstracts to the publisher website and display the PDF copy on our platform. Clicks to view the full text will be directed to the publisher website, where only users with subscriptions or access through their institution are able to view the full article.