3 years ago

Laser tuned large position-dependent tunneling detection dominated by interface states in silicon based oxide-semiconductor structure

Anhua Dong, Jing Lu, Shuai Liu, Zhikai Gan, Peiqi Zhou, Hui Wang
A laser tuned tunneling detection is observed in SiO_2(50nm)/p-Si/SiO_2 structure. In comparison of dark condition, the tunneling current get amplified considerably over 250 times when irradiated with a low intensity laser (5mW) directly on the oxide layers. This huge amplified tunneling is unusual ...

Publisher URL: http://www.osapublishing.org/abstract.cfm

DOI: oe-27-2-743

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