3 years ago

Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors

Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors
Hua Yu, Mengzhou Liao, Luojun Du, Peng Chen, Jian Tang, Xiaobo Lu, Guangyu Zhang, Shuopei Wang, Li Xie, Rong Yang, Dongxia Shi, Guibai Xie, Jing Zhao, Jing Zhang, Guole Wang
2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2. FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics. A grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2 FETs with channel lengths ≈4 nm. These ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of ultrascaled devices based on 2D materials.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/adma.201702522

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