5 years ago

Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al–Ge–Al Nanowire Heterostructures

Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al–Ge–Al Nanowire Heterostructures
Johannes Greil, Alois Lugstein, Philipp Staudinger, Martin Holzbauer, Emmerich Bertagnolli, Masiar Sistani, Hermann Detz
Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of “on”-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al–Ge–Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal–oxide–semiconductor platform technology.

Publisher URL: http://dx.doi.org/10.1021/acs.nanolett.7b00425

DOI: 10.1021/acs.nanolett.7b00425

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