3 years ago

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator
Alan C. Farrell, Hyunseok Kim, Akshay Balgarkashi, Wook-Jae Lee, Diana L. Huffaker
Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Publisher URL: http://dx.doi.org/10.1021/acs.nanolett.7b01360

DOI: 10.1021/acs.nanolett.7b01360

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