Crystal Growth & Design
Crystal Growth & Design
5 years ago

Comparison of Modeling Strategies for the Growth of Heterostructures in III–V Nanowires

Comparison of Modeling Strategies for the Growth of Heterostructures in III–V Nanowires
Frank Glas
Two models of the growth of axial heterostructures in nanowires of compound semiconductors are developed and tested against experiments. For the (Al,Ga)As system, the equilibrium model predicts well the composition profiles. Two variants of a nucleation model, with and without variation of the nucleus edge energy with composition, are compared.

Publisher URL: http://dx.doi.org/10.1021/acs.cgd.7b00732

DOI: 10.1021/acs.cgd.7b00732

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