Junyi Zhai, Ke Zhang, Zhong Lin Wang, Aifang Yu, Junmeng Guo, Yudong Liu, Yan Zhang, Rongmei Wen, Jinzong Kou, Yang Zhang
Utilizing magnetic field directly modulating/turning the charge carrier transport behavior of field-effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro–nanoelectronics. Here, a new type of magnetic-induced-piezopotential gated field-effect-transistor (MIPG-FET) base on laminate composites is proposed, which consists of Terfenol-D, a ferroelectric single crystal (PMNPT), and MoS2 flake. When applying an external magnetic field to the MIPG-FET, the piezopotential of PMNPT triggered by magnetostriction of the Terfenol-D can serve as the gate voltage to effectively modulate/control the carrier transport process and the corresponding drain current at room temperature. Considering the two polarization states of PMNPT, the drain current is diminished from 9.56 to 2.9 µA in the Pup state under a magnetic field of 33 mT, and increases from 1.41 to 4.93 µA in the Pdown state under a magnetic field of 42 mT and at a drain voltage of 3 V. The current on/off ratios in these states are 330% and 432%, respectively. This work provides a novel noncontact coupling method among magnetism, piezoelectricity, and semiconductor properties, which may have extremely important applications in magnetic sensors, memory and logic devices, micro-electromechanical systems, and human–machine interfacing.
Magnetic-induced-piezopotential gated field-effect transistor consists of rare-earth Terfenol-D (TbxDy(1−x)Fe alloys), ferroelectric single crystal [Pb(Mn1/3Nb2/3)O3](1−x)-[PbTiO3]x, and 2D MoS2 flake, and realizes the magnetic field modulating carrier transport of the MoS2 flake instead of the gate voltage. This laminate composite device provides a new method for magnetic field tuning semiconductor properties besides spintronics.