3 years ago

Hybridization at superconductor-semiconductor interfaces in Majorana devices.

Panagiotis Kotetes, Karsten Flensberg, Peter Krogstrup, August E. G. Mikkelsen

Hybrid superconductor-semiconductor devices are currently one of the most promising platforms for realizing robust Majorana zero modes. We address the role of band bending and superconductor-semiconductor hybridization in such devices by analyzing a gateable planar Al-InAs interface using a self-consistent Schr\"odinger-Poisson approach. Our numerical analysis shows that the band bending leads to an interface quantum well, which localizes the charge in the system near the superconductor-semiconductor interface. We investigate the hybrid band structure of the system and analyze its response to varying the gate voltage and thickness of the Al layer, thereby showing that one may obtain states with strong superconductor-semiconductor hybridization at the Fermi energy. In addition, we obtain approximate analytical expressions to further back our numerical findings. We conclude by discussing the consequences of our findings for the realization of Majorana zero modes in nanowire-based systems.

Publisher URL: http://arxiv.org/abs/1801.03439

DOI: arXiv:1801.03439v1

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