3 years ago

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

Highly
Flexible Resistive Switching Memory Based on the Electronic Switching
Mechanism in the Al/TiO2/Al/Polyimide Structure
Cheol Seong Hwang, Zhengchun Yang, Jinshi Zhao, Shangfei Wan, Ming Zhang
A highly flexible resistive switching (RS) memory was fabricated in the Al/TiO2/Al/polyimide structure using a simple and cost-effective method. An electronic-resistive-switching-based flexible memory with high performance that can withstand a bending strain of up to 3.6% was obtained. The RS properties showed no obvious degradation even after the bending tests that were conducted up to 10 000 times, and over 4000 writing/erasing cycles were confirmed at the maximally bent state. The superior electrical properties against the mechanical stress of the device can be ascribed to the electronic RS mechanism related to electron trapping/detrapping, which can prevent the inevitable degradation in the case of the RS related with the ionic defects.

Publisher URL: http://dx.doi.org/10.1021/acsami.7b16214

DOI: 10.1021/acsami.7b16214

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