3 years ago

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN
Ran Liu, Linna Pang, Pengyu Song, Zhilai Fang, Tienmo Shih, Wenzhong Shen, Cheng Li, Dingqu Lin, Guangyang Lin, Li Chen, Junyong Kang, Zhengyuan Wu
An interface-modification technique is developed to efficiently block threading defects in semipolar GaN. Mechanisms governing the interface modification via site-specific Ga filling and nanograin growth into islands are clarified based on surface atomic structures and theories of Gibbs free energy. Crystalline qualities and optical properties of semipolar GaN epilayers are significantly improved by the interface modification.

Publisher URL: http://dx.doi.org/10.1021/acs.cgd.7b00584

DOI: 10.1021/acs.cgd.7b00584

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