Advanced Materials
Advanced Materials
5 years ago

Organic Thin-Film Transistors: UV–Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection (Adv. Mater. 31/2017)

Organic Thin-Film Transistors: UV–Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection (Adv. Mater. 31/2017)
Binghao Wang, Ferdinand S. Melkonyan, Xinming Zhuang, Junsheng Yu, Shijiao Han, Gang Wang, Antonio Facchetti, Tobin J. Marks, Li Zeng, Wei Huang, Michael J. Bedzyk
Ultra-sensitive OTFT-based NO2 gas sensors implementing a simple, low-cost UV/ozone (UVO) activation of the TFT gate dielectric layer are fabricated, as discussed in article number 1701706 by Junsheng Yu, Tobin J. Marks, Antonio Facchetti and co-workers. UVO generates oxygen-containing functional groups which strongly bind the NO2 molecules, which contributes to limit of detection of ≈400 ppb, and sensitivity approaches ≈200% and ≈160 000% for NO2 concentrations of 1 ppm and 30 ppm, respectively.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/adma.201770226

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