3 years ago

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping
Yongtaek Hong, Seok-Gyu Ban, Sung Kyu Park, Yong-Hoon Kim, Myung-Gil Kim, Jae Sang Heo, Jesse S. Jur, Jun Ho Lee, Daesik Kim, Taehoon Kim
The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm2 V−1 s−1, respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. With the introduction of selective n-type doping and a photochemical patterning process, reliable thread-like single-walled carbon nanotube complementary metal-oxide-semiconductor inverter circuits are successfully implemented on cylindrical fiber substrates using reel processing. The circuits exhibit field-effect mobilities of 4.03 and 2.15 cm2 V−1 s−1 for p- and-n-type thin-film transistors (TFTs), respectively, demonstrating a gain of 6.76 and a frequency response of >50 Hz.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/adma.201701822

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