arXiv Mesoscale and Nanoscale Physics
arXiv Mesoscale and Nanoscale Physics
5 years ago

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths. (arXiv:1811.01346v2 [cond-mat.mes-hall] UPDATED)

Grzegorz Sęk Stephan Reitzenstein Sven Rodt André Strittmatter David Quandt Nicole Srocka Tobias Heuser Łukasz Dusanowski Krzysztof Gawarecki Anna Musiał Paweł Mrowiński
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range. The obtained results provide deeper knowledge on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths.

Publisher URL: http://arxiv.org/abs/1811.01346

DOI: arXiv:1811.01346v2

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