3 years ago

Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer

Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer
Xiantong Zheng, Huolin Huang, Guotong Du, Jianxun Liu, Rensheng Shen, Xiaochuan Xia, Yang Liu, Hongwei Liang, Yingmin Luo, Qasim Abbas
In0.42Ga0.58N/GaN double heterostructures on c-plane sapphire substrate were grown by metal–organic chemical vapor deposition. High-angle annular dark field scanning transmission electron microscopy revealed that the In0.42Ga0.58N layer features a porous structure consisting of multifaceted voids with a density of 109 cm–2 and an average diameter of 74.6 nm, which was attributed to thermodynamically preferential vacancies aggregation. Both photoluminescence and cathodoluminescence showed luminescence quenching in the In0.42Ga0.58N layer. A void model involving void surface trapping and hindered radiative recombination quantitatively described the luminescence quenching mechanism. Moreover, it is found that the indium (In) precipitates within the In0.42Ga0.58N layer were void-In complexes in nature, consisting of the same quenching centers as voids and adversely affecting the luminescence. These results will provide critical insight into the optical degradation of InGaN-based light-emitting devices with high In content.

Publisher URL: http://dx.doi.org/10.1021/acs.jpcc.7b06837

DOI: 10.1021/acs.jpcc.7b06837

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