4 years ago

Room-Temperature Fabrication of High-Performance Amorphous In–Ga–Zn–O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper

Room-Temperature Fabrication of High-Performance Amorphous In–Ga–Zn–O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper
Zeke Zheng, Junbiao Peng, Zhiqiang Fang, Wenzhong Bao, Panpan Zhou, Yudi Kuang, Rihui Yao, Gang Chen, Hongke Zhang, Yong Zeng, Honglong Ning
Integrating biodegradable cellulose nanopaper into oxide thin-film transistors (TFTs) for next generation flexible and green flat panel displays has attracted great interest because it offers a viable solution to address the rapid increase of electronic waste that poses a growing ecological problem. However, a compromise between device performance and thermal annealing remains an obstacle for achieving high-performance nanopaper TFTs. In this study, a high-performance bottom-gate IGZO/Al2O3 TFT with a dual-layer channel structure was initially fabricated on a highly transparent, clear, and ultrasmooth nanopaper substrate via conventional physical vapor deposition approaches, without further thermal annealing processing. Purified nanofibrillated cellulose with a width of approximately 3.7 nm was used to prepare nanopaper with excellent optical properties (92% transparency, 0.85% transmission haze) and superior surface roughness (Rq is 1.8 nm over a 5 × 5 μm2 scanning area). More significantly, a bilayer channel structure (IGZO/Al2O3) was adopted to fabricate high performance TFT on this nanopaper substrate without thermal annealing and the device exhibits a saturation mobility of 15.8 cm2/(Vs), an Ion/Ioff ratio of 4.4 × 105, a threshold voltage (Vth) of −0.42 V, and a subthreshold swing (SS) of 0.66 V/dec. The room-temperature fabrication of high-performance IGZO/Al2O3 TFTs on such nanopaper substrate without thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, lightweight, and green paper displays.

Publisher URL: http://dx.doi.org/10.1021/acsami.7b07525

DOI: 10.1021/acsami.7b07525

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