Element- and momentum- resolved electronic structure of the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As.
We have studied the electronic structure of the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As and undoped GaAs with standing-wave (SW) hard X-ray angle-resolved photoemission (HARPES). The standing wave is produced by Bragg reflection of X-rays at a few keV from the {111} planes of (001)-oriented epitaxial films of Ga$_{0.95}$Mn$_{0.05}$As and single-crystal GaAs, and is moved through the unit cell by scanning photon energy over the Bragg condition. By projecting the energy-scan HARPES intensities into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, we are able to conclude that Mn is substitutional, and that a decomposition of the data into element- and momentum- resolved intensities is possible. Comparison with element-projected Bloch spectral functions yields excellent agreement with experiment. This novel SW-HARPES technique should be broadly applicable to other multi-element materials.
Publisher URL: http://arxiv.org/abs/1801.06587
DOI: arXiv:1801.06587v1
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