3 years ago

Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier

Modification
of Vapor Phase Concentrations in MoS2 Growth Using a NiO
Foam Barrier
Jisheng Pan, Kumar Priyadarshi, Xiaoyang Cui, Dongzhi Chi, Andrew T. S. Wee, Swee Liang Wong, Shijie Wang, Kuan Eng Johnson Goh, Shi Wun Tong, Stephen J. Pennycook, Ming Yang, Fabio Bussolotti, Yee-Fun Lim, Pranjal Kumar Gogoi
Single-layer molybdenum disulfide (MoS2) has attracted significant attention due to its electronic and physical properties, with much effort invested toward obtaining large-area high-quality monolayer MoS2 films. In this work, we demonstrate a reactive-barrier-based approach to achieve growth of highly homogeneous single-layer MoS2 on sapphire by the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO3, the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 μm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement by observation of a very well resolved electronic band structure and spin–orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS2 monolayer.

Publisher URL: http://dx.doi.org/10.1021/acsnano.7b07682

DOI: 10.1021/acsnano.7b07682

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