3 years ago

Piezotronic Effect on Rashba Spin–Orbit Coupling in a ZnO/P3HT Nanowire Array Structure

Piezotronic Effect on Rashba Spin–Orbit Coupling
in a ZnO/P3HT Nanowire Array Structure
Leijing Yang, Ying Wang, Baodong Chen, Zhong Lin Wang, Yan Zhang, Longfei Wang, Pei Lin, Libo Chen, Laipan Zhu
A key concept in the emerging field of spintronics is the voltage-gate control of spin precession via the effective magnetic field generated by the Rashba spin–orbit coupling (SOC). Traditional external gate voltage usually needs a power supply, which can easily bring about background noise or lead to a short circuit in measurement, especially for nanoscale spintronic devices. Here, we present a study on the circular photogalvanic effect (CPGE) in a ZnO/P3HT nanowire array structure with the device excited under oblique incidence. We demonstrate that a strong Rashba SOC is induced by the structure inversion asymmetry of the ZnO/P3HT heterointerface. We show that the Rashba SOC can be effectively tuned by inner-crystal piezo-potential created inside the ZnO nanowires instead of an externally applied voltage. The piezo-potential can not only ensure the stability of future spin-devices under a static pressure or strain but also work without the need of extra energy; hence this room-temperature generation and piezotronic effect control of spin photocurrent demonstrate a potential application in large-scale flexible spintronics in piezoelectric nanowire systems.

Publisher URL: http://dx.doi.org/10.1021/acsnano.7b08618

DOI: 10.1021/acsnano.7b08618

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