3 years ago

Long-term drift of Si-MOS quantum dots with intentional donor implants.

Neil M. Zimmerman, Roy Murray, Malcolm S. Carrol, Bahman Sarabi, Martin Rudolph

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics in the form of transients and discrete jumps that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a $1/f$ noise dependence, and a noise strength as low as $1~\mathrm{\mu eV/\sqrt{Hz}}$, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or $1/f$ noise.

Publisher URL: http://arxiv.org/abs/1801.07776

DOI: arXiv:1801.07776v1

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